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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1159 DESCRIPTION *With TO-220 package APPLICATIONS *TV horizontal deflection output, *High-current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 60 6 4.5 10 40 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=5mA ;RBE= IC=5mA ;IE=0 IE=5mA ;IC=0 IC=4A, IB=0.4A IC=4A, IB=0.4A VCB=40V;IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IC=1A ; VCE=5V 30 25 10 MIN 60 200 6 0.5 TYP. 2SD1159 MAX UNIT V V V 1.0 1.5 0.1 0.1 160 V V mA mA MHz Switching times tf Fall time IC=5A;IB1=-IB2=0.5A; VCC=50V 0.2 0.5 s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1159 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1159 4 |
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